| 摘要 |
A light emitting semiconductor device die ( 10, 110, 210, 310 ) includes an electrically insulating substrate ( 12, 112 ). First and second spatially separated electrodes ( 60, 62, 260, 262, 360, 362 ) are disposed on the electrically insulating substrate. The first and second electrodes define an electrical current flow direction directed from the first electrode to the second electrode. A plurality of light emitting diode mesas ( 30, 130, 130', 230, 330 ) are disposed on the substrate between the first and second spatially separated electrodes. Electrical series interconnections ( 50, 150, 250, 350 ) are disposed on the substrate between neighboring light emitting diode mesas. Each series interconnection carries electrical current flow between the neighboring mesas in the electrical current flow direction. |
