METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE HAVING LANDING PLUG CONTACT

摘要

A method of fabricating a semiconductor device having a landing plug contact is provided to suppress a residual material defect and a scratch defect on a peripheral circuit by completely removing a photoresist layer pattern. A method of fabricating a semiconductor device having a landing plug contact includes the steps of: forming a gate stack on a semiconductor substrate(300) and interposing an interlayer insulating layer(310) between the gate stack; forming a hard mask layer pattern exposing a first area where a landing plug contact hole is to be formed; forming the landing plug contact hole by etching the interlayer insulating layer(310) exposed in the first area; forming a conductive layer for the landing plug contact hole on a front plane where the landing plug contact hole is formed; forming a mask layer pattern on the conductive layer for exposing a cell area(100) and covering the neighboring circuit area(200); removing the mask layer pattern with exposing an upper part of the hard mask layer pattern by performing an etch back; and forming the landing plug contact hole which is separated on the first area.