发明名称 METHOD FOR PRODUCING MONOCRYSTALLINE SILICON CHIPS
摘要 FIELD: treatment of silicon mono-crystals grown by Czochralski method, possibly manufacture of mono-crystalline silicon chips- members of solar batteries and integrated circuits. ^ SUBSTANCE: method comprises steps of pseudo-squaring of silicon mono-crystal for further grinding ribs of pseudo-squared ingot; cutting mono-crystals by chips. Ribs are ground alternatively; each rib is ground layer by layer in motion direction of tool and in parallel relative to lengthwise axis of ingot. ^ EFFECT: improved quality of mono-crystalline silicon chips due to safety of near-contour region of worked zone of ingot, lowered material (silicon) losses at working ingots. ^ 3 cl, 1 ex, 1 tbl, 3 dwg
申请公布号 RU2308556(C1) 申请公布日期 2007.10.20
申请号 RU20050141099 申请日期 2005.12.28
申请人 OTKRYTOE AKTSIONERNOE OBSHCHESTVO "PODOL'SKIJ KHIMIKO-METALLURGICHESKIJ ZAVOD" 发明人 EGOROV EVGENIJ PETROVICH;KAZIMIROV NIKOLAJ IVANOVICH;SOROKIN SERGEJ LEONIDOVICH;BATJUKOV VALERIJ VLADIMIROVICH;KNJAZEV STANISLAV NIKOLAEVICH
分类号 C30B33/00;B24B9/00;C30B29/06;H01L21/304 主分类号 C30B33/00
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