发明名称 |
METHOD FOR PRODUCING MONOCRYSTALLINE SILICON CHIPS |
摘要 |
FIELD: treatment of silicon mono-crystals grown by Czochralski method, possibly manufacture of mono-crystalline silicon chips- members of solar batteries and integrated circuits. ^ SUBSTANCE: method comprises steps of pseudo-squaring of silicon mono-crystal for further grinding ribs of pseudo-squared ingot; cutting mono-crystals by chips. Ribs are ground alternatively; each rib is ground layer by layer in motion direction of tool and in parallel relative to lengthwise axis of ingot. ^ EFFECT: improved quality of mono-crystalline silicon chips due to safety of near-contour region of worked zone of ingot, lowered material (silicon) losses at working ingots. ^ 3 cl, 1 ex, 1 tbl, 3 dwg |
申请公布号 |
RU2308556(C1) |
申请公布日期 |
2007.10.20 |
申请号 |
RU20050141099 |
申请日期 |
2005.12.28 |
申请人 |
OTKRYTOE AKTSIONERNOE OBSHCHESTVO "PODOL'SKIJ KHIMIKO-METALLURGICHESKIJ ZAVOD" |
发明人 |
EGOROV EVGENIJ PETROVICH;KAZIMIROV NIKOLAJ IVANOVICH;SOROKIN SERGEJ LEONIDOVICH;BATJUKOV VALERIJ VLADIMIROVICH;KNJAZEV STANISLAV NIKOLAEVICH |
分类号 |
C30B33/00;B24B9/00;C30B29/06;H01L21/304 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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