| 摘要 |
The present invention provides methods and apparatuses for a non-volatile semiconductor memory device. A non-volatile semiconductor memory device having multiple layers to provide a source, a drain, and a floating gate, comprising a plurality of metal layers to provide interconnects to the non-volatile memory wherein at least two of the plurality of metal areas on one or more layers are configured to provide a capacitor having a capacitance that is capacitively coupled to the floating gate.
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