MULTI-STEP ANNEAL OF THIN FILMS FOR FILM DENSIFICATION AND IMPROVED GAP-FILL

摘要

A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800°C or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800°C to about 1400°C in a second atmosphere lacking oxygen.