发明名称 |
MASK BLANK FOR EXTREME ULTRAVIOLET RAY EXPOSURE, MASK FOR EXTREME ULTRAVIOLET RAY EXPOSURE, AND PATTERN TRANSFER METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an EUV exposure mask capable of securing contrast of a laminate including a capping film laminated on a multilayer film and an absorption film defect to improve defect inspection ability by DUV light. <P>SOLUTION: The EUV exposure mask includes the multilayer film, the capping film and the buffer film laminated on a substrate, and further includes the absorption film laminated thereon. Reflectivity of the laminate from the multilayer film to the absorption film is≤26% in an ultraviolet region with a wavelength of 190-260 nm. The absorption film is formed so that its refractive index gradually increases toward the capping film. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2007273652(A) |
申请公布日期 |
2007.10.18 |
申请号 |
JP20060096189 |
申请日期 |
2006.03.31 |
申请人 |
TOPPAN PRINTING CO LTD |
发明人 |
MATSUO TADASHI;KANAYAMA KOICHIRO;TAMURA SHINPEI |
分类号 |
H01L21/027;G03F1/22;G03F1/24 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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