| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a reflective mask blanks capable of realizing pattern transfer having higher contrast than that of a conventional CrN-based material, and to provide a reflective mask. <P>SOLUTION: The reflective mask blanks 10 has a substrate 1, a multilayer reflection film 2 for reflecting an exposure light, a protective film 6 on the multilayer reflection film 2, a buffer layer 3, and an absorber film 4 for absorbing the exposure light. These are sequentially formed on the substrate 1. The buffer layer 3 is made of a material containing chromium (Cr) as a main component, containing at least one kind of element selected from among silver (Ag), tellurium (Te), osmium (Os), rhenium (Re), and germanium (Ge). In the reflective mask 20, a transfer pattern is formed on the absorber film of the reflective mask blanks. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
