摘要 |
A method of forming compressive nitride film is provided. The method includes performing a chemical vapor deposition (CVD) process to form a nitride film on a substrate, and the method is characterized by adding a certain gas, selected from among Ar, N<SUB>2</SUB>, Kr, Xe, and mixtures thereof. Due to the addition of the foregoing certain gas, it can reduce the compressive stress, thereby increasing PMOS drive current gain.
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