| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a silicon oxide film exhibiting excellent embedding properties and film properties is formed onto recesses having high aspect ratio. <P>SOLUTION: The semiconductor device includes: an underlying layer region having recesses formed on a main surface side of the semiconductor device, and the silicon oxide film containing chlorine embedded inside the whole recesses of the underlying layer. <P>COPYRIGHT: (C)2008,JPO&INPIT |
