发明名称 SUBSTRATE PROCESSING METHOD AND APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus capable of removing water on the surface of a substrate without forming a watermark thereon with a simple configuration. SOLUTION: A very small water layer is formed on the surface of a semiconductor wafer that is cleaned, and subsequently it is dry-processed in a non-oxide atmosphere. The coverage of the surface of the semiconductor wafer with the very small water layer enables eliminating the effect of oxygen in the atmosphere, which causes the water mark, on the surface of the semiconductor wafer, thus making it possible to inhibit the formation of the water mark on the surface of the substrate. The very small water layer can be appropriately formed by detecting an interference pattern on the substrate surface or by detecting the dispersion of laser light that is irradiated in the vicinity of the substrate surface in parallel with the substrate surface. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007273805(A) 申请公布日期 2007.10.18
申请号 JP20060098577 申请日期 2006.03.31
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YOKOI HIROKAZU;YAMAGUCHI TSUNEO;KAWABATA YUJI
分类号 H01L21/304 主分类号 H01L21/304
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