MEASURING A DAMAGED STRUCTURE FORMED ON A WAFER USING OPTICAL METROLOGY,申请号WO2007US08266-传众专利搜索

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发明名称	MEASURING A DAMAGED STRUCTURE FORMED ON A WAFER USING OPTICAL METROLOGY
摘要	<p>A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.</p>
申请公布号	WO2007117436(A2)	申请公布日期	2007.10.18
申请号	WO2007US08266	申请日期	2007.03.29
申请人	TOKYO ELECTRON, LTD.;LALLY, KEVIN;FUNK, MERRITT;SUNDARARAJAN, RADHA	发明人	LALLY, KEVIN;FUNK, MERRITT;SUNDARARAJAN, RADHA
分类号	G01N21/00	主分类号	G01N21/00
代理机构		代理人
主权项
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