| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology that enables manufacture of a device capable of highly accurately detecting even a high-frequency signal of a high frequency, by solving the problem of a parasitic capacitance or the like occurring in a connection part of each element. SOLUTION: In order to integrally form a planar antenna 3, amplifier circuit 5, and detection circuit 7; a basic member is formed by laminating a semiconductor layer for amplifier-circuit formation on a support substrate, forming an InP layer 15 on the semiconductor layer, and laminating a semiconductor layer for detection-circuit formation on the InP layer. Then, the detection circuit 7 is formed by machining the semiconductor layer for detection-circuit formation in the basic member. After that, a second support substrate 40 is stuck onto the surface of the basic member on the detection circuit 7 side. Subsequently, the support substrate arranged at the lowermost layer when the basic member is formed is removed, and the upper side and the lower side of the basic member are reversed so that the amplifier circuit 5 and the planar antenna 3 are formed by machining the semiconductor layer for amplifier-circuit formation formed in the basic member. The amplifier circuit 5 and the detection circuit 7 are electrically connected with each other by a capacitor 60 during the machining. COPYRIGHT: (C)2008,JPO&INPIT |
