发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFATURING THE SAME |
摘要 |
The semiconductor device includes a reference voltage generator circuit and a circuit different from the reference voltage generator circuit. A semiconductor element of the reference voltage generator circuit has a channel region where a substrate impurity concentration is substantially uniform at least in the vicinity of a drain region. A semiconductor element of the circuit different from the reference voltage generator circuit has a channel region where a substrate impurity concentration is higher than in other part of the region at least in the drain region.
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申请公布号 |
US2007243684(A1) |
申请公布日期 |
2007.10.18 |
申请号 |
US20070767074 |
申请日期 |
2007.06.22 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
KATSUKI NOBUYUKI;OGA ATSUSHI;SENOU SHUUICHI;OTA NORIYUKI;YOSHIDA MASAHIRO;ARAI KENTA;NAKAGAWA ATSUSHI;MURAKAMI TOMOTAKA |
分类号 |
H01L21/8234;H01L27/04;H01L21/822;H01L27/088;H01L27/148;H01L29/10;H01L29/78 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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