SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor light-emitting device and a method of fabricating the same are provided to prevent deterioration of the brightness without interruption of an optical path by disposing a bonding pad in a surface edge of the semiconductor light-emitting device. A semiconductor light-emitting device includes a multi-layer structure(11) and an electrode(13). The electrode is disposed on the multi-layer structure and includes a plurality of bonding pads(131). The electrode is a P-type electrode or an N-type electrode. The plurality of bonding pads are electrically connected to each other through a conductor(17). The conductor is metal or semiconductor. Each area of the bonding pads ranges from 1 to 25 % of a surface area. The plurality of bonding pads includes a first bonding pad and a second bonding pad. A plurality of wires(15) is connected to the plurality of bonding pads.