| 摘要 |
PROBLEM TO BE SOLVED: To provide a multiple wavelength semiconductor layer device for suppressing any adverse effect due to striation or the like. SOLUTION: In a first light emitting element LD1, recesses 11a and 11b are formed at the both sides of a ridge 12, and an insulating layer 14a and an ohmic electrode layer 14b are laminated at a trapezoidal terrace for the recesses 11a and 11b. In a second light emitting element LD2, recesses 21a and 21b are formed at the both sides of the ridge 22, and an insulating layer 24a and an ohmic electrode layer 24b are laminated at a trapezoidal terrace for the recesses 21a and 21b. Ohmic electrode layers 14b and 24b are directly connected, and ridges 12 and 22 are positioned in a hole CB constituted of the recesses 11a, 11b, 21a and 21b. Thus, it is possible to prevent any striation in the neighborhood of a cleavage face in the case of carrying out cleavage. COPYRIGHT: (C)2008,JPO&INPIT
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