| 摘要 |
<p>A nitride semiconductor light emitting element comprising a nitride semiconductor layer (100) consisting of a supporting substrate (170), a p-type nitride semiconductor layer (140) provided on the supporting substrate (170), an MQW active layer (130) provided on the p-type nitride semiconductor layer (140), and an n-type nitride semiconductor layer (120) provided on the MQW active layer (130), a contact electrode (161) provided on the n-type nitride semiconductor layer (120), a light transmitting second transparent electrode (165) provided on the contact electrode (161), and a second pad electrode (166) provided on the supporting substrate (170) and connected electrically with the second transparent electrode (165), wherein the projection area of the major surface of the MQW active layer (130) and the projection area of the second pad electrode (166) do not overlap on a projection plane (S) parallel with the major surface of the MQW active layer (130).</p> |
