| 摘要 |
PROBLEM TO BE SOLVED: To reduce effect of a characteristic of an end of a channel formation region of a semiconductor film on a characteristic of a transistor. SOLUTION: An island semiconductor film is formed on a substrate, and a conductive film for forming a gate electrode, which is provided through a gate insulating film, on the semiconductor film. In the semiconductor film, a channel formation region, and first and second impurity regions for forming a source or drain region, respectively, are formed. The channel formation region is provided in an area where it is overlapped with a gate electrode across the island semiconductor film, and the first impurity region is provided adjacently to the channel formation region, and the second impurity region is provided adjacently to the channel formation region and the first impurity region. The first and second impurity regions are made different in conduction type. The second impurity region and the channel formation region are made different in conduction type, or even if they have the same conduction type, they are made different in concentration of an impurity element contained in each impurity region. COPYRIGHT: (C)2008,JPO&INPIT
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