| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which only a high frequency current flowing a part of the internal line can be suppressed selectively. SOLUTION: The semiconductor device 1 comprises a semiconductor substrate 2, an insulating layer 3 formed on the semiconductor substrate 2, a magnetic body 10 buried in a partial region Rf of the insulating layer 3 to reach the surface thereof, and a metallization 5 buried in the insulating layer 3 to penetrate the magnetic body 10. The magnetic body 10 covers the entire circumference of the metallization 5 in the partial region Rf. COPYRIGHT: (C)2008,JPO&INPIT
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