| 摘要 |
In a method for forming a silicon-on-insulator FET providing a contact to be given a fixed potential to a substrate, substrate-biasing between an SOI transistor and the silicon substrate is performed via a plug. As a result, the contact hole for the substrate-biasing does not need to pass through an insulating layer, a silicon layer, and an interlayer insulating layer. Therefore, the interlayer insulating layer can be made to have shallow depth. Ions can be implanted to the surface of the substrate via the contact hole for substrate biasing. As a result, contact holes for substrate-biasing can be formed without the contact holes for substrate-biasing causing an opening fault.
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