| 摘要 |
An input/output sense amplifier for low power and high speed operation of a semiconductor memory device is provided to improve data processing rate of the semiconductor memory device by improving sense amplification capability of the input/output sense amplifier. According to an input/output sense amplifier of a semiconductor memory device amplifying and outputting data provided from a memory cell during a read operation to the outside while the data is transferred to a global input/output line pair from a local input/output line pair, a first sense amplifier part(100) pulls up one of a first and a second input/output line to a power supply voltage level by sensing and amplifying the data transferred to the local input/output line pair, and pulls down the other input/output line to a ground voltage level. A second sense amplifier part(200) pulls down one of the first and the second input/output line to the ground voltage level by sensing and amplifying the data transferred to the local input/output line pair. A third sense amplifier part(300) transfers the data amplified by sensing and amplifying potential difference between the first and the second input/output line to the global input/output line pair.
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