| 摘要 |
A reverse battery protection circuits that provides an integrated reverse battery condition solution for protection of external NMOS switches during the reverse battery condition is disclosed herein. This reverse battery protection circuit minimizes power consumption during a reverse battery event wherein there is no need for mechanical adjustments such as heat sinking and clamping to extract the heat away from the silicon and not destroy the device. Specifically, the reverse battery protection circuit includes a push-pull gate drive circuit coupled between the first and second power supply rail. A protection subcircuit portion connects between a first output node and the second power supply rail to turn the external FET 'on' during the reverse battery condition. In particular, the protection subcircuit portion connects to the external FET device and includes a p-channel device connected between a second output node that biases the external FET device and a first diode. A resistor connects between a first output node of the reverse battery protection circuit to provide a voltage drop between the drain terminal and the gate of the p-channel device. A second diode connects between the gate and the source of the p-channel device. In addition, a clamping circuit connects between the second output node and the third output node to provide clamping in the instance where the voltage at the second output node momentarily rises too high.
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