发明名称 |
Radiation-emitting semiconductor component |
摘要 |
A radiation-emitting semiconductor component, having a semiconductor layer sequence ( 1 ) with an active zone ( 2 ) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer ( 4 ) and an intermediate layer ( 3 ) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer ( 4 ) which faces the active zone. The radiation-emitting semiconductor component is provided for operation with an optical resonator and for generating predominantly incoherent radiation as an RCLED or the radiation-emitting semiconductor component being provided for operation with an external optical resonator and for generating predominantly coherent radiation as a VECSEL.
|
申请公布号 |
US7283577(B2) |
申请公布日期 |
2007.10.16 |
申请号 |
US20050291692 |
申请日期 |
2005.11.30 |
申请人 |
OSRAM OPTO SEMICONDUCTOR GMBH |
发明人 |
SCHMID WOLFGANG;WIRTH RALPH;STREUBEL KLAUS |
分类号 |
H01S3/08;H01L33/10;H01L33/46 |
主分类号 |
H01S3/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|