| 摘要 |
A semiconductor device and a fabricating method thereof are provided to prevent a depletion layer from being formed on a gate electrode by forming the gate electrode on a gate oxide layer. A gate oxide layer, a metal layer and a polycrystal silicon layer are sequentially formed on a semiconductor substrate(10), and a photoresist pattern is formed on the polycrystal silicon layer. The polycrystal silicon layer, the metal layer and the gate oxide layer are etched through the photoresist pattern as an etching mask. The substrate is implanted with ion to form a spacer(S). A metal layer and a titanium nitride layer are deposited on the substrate and is subjected to primary rapid thermal process. The metal layer and the titanium nitride layer which are not reacted are removed, and the substrate is again subjected to secondary rapid thermal process to form a silicide(60).
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