| 摘要 |
<p>A thin film transistor array substrate and a method for fabricating the same are provided to use an organic insulating layer having a high permittivity and to improve response speed of the thin film transistor. A thin film transistor array substrate includes thin film transistors. The thin film transistor includes a gate electrode(102), a gate insulating layer(104), an active layer(106a), an Ohmic contact layer(106a), and source and drain electrodes(108,110). The gate insulating layer(104) is formed on the gate electrode(102) by curing core-shell structure nano particles to form an inorganic-organic thin film. The active layer(106a) is formed on the gate insulating layer(104) corresponding to the gate electrode(102). The Ohmic contact layer(106a) is spaced from an upper surface of the active layer(106a). The source and drain electrodes overlap the Ohmic contact layer(106b) in a two-dimensional manner.</p> |
