| 摘要 |
A semiconductor device includes a lower electrode, an upper electrode, and a fuse element that connects the lower electrode and the upper electrode. Between the lower electrode and the upper electrode, insulating films stacked in this order exist. Out of the insulating films, the insulating film located in the middle has absorptivity of light larger than those of the other insulating films. Thus, in the present invention, a fuse element that is vertically long and penetrates an insulating film of which the absorptivity of light is large in the central portion is used, so that it is possible to effectively absorb energy of a laser beam. Further, it is possible to cut the fuse element using an optical system having a small depth of focus, so that it is possible to cut the fuse element without destructing a passivation layer.
|
