发明名称 VAPOR-PHASE EPITAXIAL GROWTH DEVICE
摘要 PROBLEM TO BE SOLVED: To increase the number of rotating susceptors that can be arranged inside a revolving susceptor. SOLUTION: The vapor-phase epitaxial growth device is provided with the revolving susceptor 4 freely rotatably arranged in a reaction vessel 2 so as to partition an epitaxial growth chamber in the reaction vessel 2, a plurality of openings provided at the outer periphery in the revolving susceptor 4 along in a circumferential direction apart at intervals, each tubular rotating susceptor 10 freely-rotatably fitted into each opening part 9 so as to store a substrate 11 and a uniform-heating plate 15 for uniformly heating the substrate by heating with a heater, each flange 12 provided at the outer periphery of each rotating susceptor 10, each bearing 13 freely-rotatably supporting the flange 12 to the revolving susceptor 4, each external gear 17 provided at the outer periphery of each uniform-heating plate 15 so as to be arranged above each bearing 13, each internal gear 18 provided on the inner face of the reaction vessel 2 so as to be meshed with the external-gear part 17, and a rotation drive device for rotating the revolving susceptor. Each meshing part 23 between the external gear 17 and the internal gear 18 is brought close to the inner-face side of the reaction vessel 2. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007266121(A) 申请公布日期 2007.10.11
申请号 JP20060086404 申请日期 2006.03.27
申请人 HITACHI CABLE LTD 发明人 NAGAI HISATAKA
分类号 H01L21/205;C23C16/44 主分类号 H01L21/205
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