| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory which can be made small in memory size. <P>SOLUTION: The memory is equipped with an n-type impurity region 12 which is formed on the main surface of a p-type silicon substrate 11 to function as the cathodes of diodes 10 and word lines 7 contained in a memory cell 9, p-type impurity regions 14 which are formed at a prescribed interval on the surface of the n-type impurity region 12 to function as the anodes of the diodes 10, bit lines 8 which are formed on the p-type silicon substrate 11 and connected to the p-type impurity regions 14, and wiring layers 27 which are formed below the bit lines 8 and connected to the n-type impurity region 12 at a prescribed interval. <P>COPYRIGHT: (C)2008,JPO&INPIT |
