发明名称 CHEMICAL VAPOR DEPOSITION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a chemical vapor deposition system which is high in safety without producing explosive copper acetylide and silver acetylide. SOLUTION: In the chemical vapor deposition system which forms a film of carbon, silicon carbide or the like by a chemical vapor deposition method by using a raw material containing at least carbon atom and hydrogen atom, materials such as aluminum, gold, titanium, platinum, nickel, molybdenum, tungsten and inconel are used for gas contact parts of connection parts etc. of a vacuum seal part and vacuum components without using copper, copper alloy, silver and silver alloy having dangerousness of producing explosive copper acetylide and silver acetylide. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007262514(A) 申请公布日期 2007.10.11
申请号 JP20060090640 申请日期 2006.03.29
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NANBA AKIHIKO;CHIKUNO TAKASHI;YAMAMOTO YOSHIYUKI;IMAI TAKAHIRO
分类号 C23C16/44;C23C16/27;C23C16/42;H01L21/205 主分类号 C23C16/44
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