发明名称 |
MULTIFERROIC LAYER, STRUCTURE INCLUDING THE LAYER, AND METHODS OF FORMING THE LAYER AND THE STRUCTURE |
摘要 |
<p>The present invention relates to forming the material represented by the following formula (1) into a layer having hexagonal crystalline structure, which is different from the orthorhombic crystalline structure of the material in bulk phase, so that the material can be used more effectively in various fields requiring multiferroic properties by obtaining multiferroic properties enhanced than the conventional multiferroic materials. RMnO<SUB>3</SUB>, (R = Lanthanide) (1)</p> |
申请公布号 |
WO2007114561(A1) |
申请公布日期 |
2007.10.11 |
申请号 |
WO2007KR00833 |
申请日期 |
2007.02.16 |
申请人 |
SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION;NOH, TAE WON;YUN, JONG GUL;LEE, JUNG HYUK |
发明人 |
NOH, TAE WON;YUN, JONG GUL;LEE, JUNG HYUK |
分类号 |
H01L27/105 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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