发明名称 Micro-electromechanical structure with self-compensation of the thermal drifts caused by thermomechanical stress
摘要 In a micro-electromechanical structure of semiconductor material, a detection structure is formed by a stator and by a rotor, which are mobile with respect to one another in presence of an external stress and are subject to thermal stress; a compensation structure of a micro-electromechanical type, subject to thermal stress and invariant with respect to the external stress, is connected to the detection structure thereby the micro-electromechanical structure supplies an output signal correlated to the external stress and compensated in temperature.
申请公布号 US2007238212(A1) 申请公布日期 2007.10.11
申请号 US20050226930 申请日期 2005.09.14
申请人 STMICROELECTRONICS S.R.L. 发明人 MERASSI ANGELO;ZERBINI SARAH;VIGNA BENEDETTO
分类号 H01L21/00 主分类号 H01L21/00
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