| 摘要 |
The present invention introduces a solid state magnetic memory concept which is based on the different inductive reactance an inductance composed of a conductor wire surrounded by magnetic material exhibits at different parts of its magnetization curve. A current pulse is used to either read or write the logic information in the bit, which is set by one of the two stable direction of circulation of the magnetic field around the conductor wire: clockwise or counter clockwise. Depending on the bit magnetization orientation there will be a larger or a smaller voltage drop across the bit, during the reading pulse. This voltage drop is also larger the faster the magnetization changes in the bit. Circuit schemes are provided for reading and addressing the bits. The proposed bit configurations are magnetically very stable and scalable.
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