| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device such as a SRAM or the like which is a stripe-type capable of planning a high integration by decreasing an area occupied by a memory cell and a high speed action is possible by increasing a drive current. <P>SOLUTION: In a SRAM 10, there is provided a portion 12E which is extended by only a length L in the width direction of a gate 11 from an active region 12D at a drain 12D side of a driver Tr 21. It is possible to reduce a compressive stress to an active region 12 of an element separation insulating film 14 by setting the length L of this extended portion 12E to 1/2 or more of a channel width W of the gate 11. <P>COPYRIGHT: (C)2008,JPO&INPIT |
