| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment device which can obtain high processing capacity. SOLUTION: This substrate treatment device 1 is provided with a processing container 2 which accommodates a substrate W and processes the substrate inside, a heater 20 which heats the substrate W accommodated in the processing container 2, a water vapor feeding means 5 which feeds water vapor into the processing container 2, an ozone gas feeding means 7 which feeds ozone gas into the processing container 2, and an N<SB>2</SB>gas feeding means 9 which feeds N<SB>2</SB>gas into the processing container 2. Further, the device is provided with an exhaust pipe 23 which exhausts the inside of the processing container 2, a flow rate controller 71 provided in the exhaust pipe 23, and a control unit 21 which controls the flow rate controller 71 so as to pressurize the inside of the processing container 2. COPYRIGHT: (C)2008,JPO&INPIT
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