| 摘要 |
<p>A method for fabricating a metal gate in a semiconductor device is provided to suppress characteristics deterioration of a transistor due to fluorine during deposition of a tungsten silicide layer. A method for fabricating a metal gate in a semiconductor device includes the steps of forming an silicon oxide layer as a gate insulating layer on a semiconductor substrate(S210), forming a polysilicon layer doped with impurities on a silicon oxide layer(S220), loading a semiconductor substrate on which the polysilicon layer is deposited in a chemical vapor deposition chamber(S230), forming a tungsten silicide layer on the polysilicon layer using a low pressure CVD method(S240), unloading the semiconductor substrate from the CVD chamber(S250), and depositing a tungsten nitride layer and a tungsten layer on the tungsten silicide layer(S260).</p> |
