METHOD OF FORMING METAL WIRING IN SEMICONDUCTOR DEVICE

摘要

A method for forming a metal wiring in a semiconductor device is provided to perform the whole process from degassing to anti-reflective coating layer deposition in a metal wiring forming apparatus module by having an anti-reflective coating layer deposition chamber. A method for forming a metal wiring in a semiconductor device includes the steps of: forming an interlayer dielectric layer(42) having a contact hole(44) on a silicon substrate(40); forming a wetting layer(46) on an inner wall and a bottom of the contact hole(44); depositing a CVD(Chemical Vapor Deposition) aluminum layer(48) on the wetting layer(46); depositing a PVD(Physical Vapor Deposition) aluminum layer on the CVD aluminum layer(48) for filling the contact hole(44); and pre-heating the CVD aluminum layer(48) in-situ inside a PVD aluminum deposition chamber to flow the CVD aluminum layer(48).