| 摘要 |
A differential amplifier circuit of a semiconductor memory device is provided to reduce skew by adding a second differential amplifier unit receiving a reference voltage and a data input signal using a PMOS transistor to a first differential amplifier unit receiving the reference voltage and the data input signal using an NMOS transistor. A first differential amplifier unit(200) outputs a first data output signal to a common node by comparing a reference voltage with a data input signal. A second differential amplifier unit(300) outputs a second data output signal to the common node by comparing the reference voltage with the data input signal. The first differential amplifier unit includes a first current mirror part(250) supplying a current to a signal input part(230) by being connected to an external supply voltage and the first signal input part receiving the reference voltage and the data input signal.
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