| 摘要 |
<p>A transistor, a pixel electrode substrate, an electro-optic device, an electronic apparatus, and a process for manufacturing a semiconductor element are provided to be used for a display-added facsimile, a view finder of a digital camera, a potable TV, and so on. A transistor includes a pair of gate lines(102,110). The first gate line(102) is formed on an insulating substrate(101). The insulating substrate(101) is formed of a plastic substrate such as PET, or a glass substrate. The first gate lie(102) can be formed by depositing metals such as aluminum, nickel, copper, titanium, silver, gold, platinum, and so on, through deposition or sputtering, and patterning the deposited metal layer using a photolithography method. The first gate line(102) can also be formed by ejecting or applying solution including metal particles through patterning, and drying the metal particles.</p> |
