| 摘要 |
A method for manufacturing a flash memory device is provided to improve the operation speed of the device by directly connecting a metal contact to a source region and to reduce contact resistance and sheet resistance. A method for manufacturing a flash memory device includes the steps of; defining an active region by forming a device isolation film which is arranged vertically to the arrangement direction of a predetermined region on a semiconductor substrate(10) except the predetermined region; forming source lines isolated from each other with the predetermined region therebetween, word lines arranged parallel to the source lines, and drain selection lines, on the semiconductor substrate(10); forming a first interlayer dielectric(16) on the result of the prior step, and forming a drain contact hole which exposes the active region between the drain selection lines; forming a drain contact(18) in the drain contact hole; forming a second interlayer dielectric(20) on the result of the prior step, and forming a metal contact hole(21) which exposes the active region between the source selection lines; and forming a metal contact in the metal contact hole.
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