| 摘要 |
A method for manufacturing a flash memory device is provided to prevent the attack of a conductive film for a floating gate during a gap fill process of trench for device isolation and a free cleaning process by masking the conductive layer for the floating gate with a blocking layer. A method for manufacturing a flash memory device includes the steps of: sequentially forming a tunnel oxide layer(11), a conductive layer for a floating gate(12), and a buffer layer on a semiconductor substrate(10); forming a blocking layer(17) on a device isolation trench by forming the trench which exposes the tunnel oxide layer(11) of the edge of a field expected region on the buffer layer and the conductive layer for the floating gate(12); forming a trench on the buffer film, the conductive film for floating gate(12), the tunnel oxide film(11), and the semiconductor substrate(10) of the field expected region; forming a device isolation layer(19a) on the device isolation trench; etching a predetermined region of the device isolation layer(19a); and burying an insulating layer in the etched device isolation layer(19a).
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