发明名称 PLASMA SOURCE ASHER
摘要 A plasma source ashing apparatus is provided to improve process efficiency and ashing uniformity by providing plasma of high density and uniformity, and to perform HDI(High Dose Implantation) photoresist ashing. A plasma source ashing apparatus includes a remote plasma source(101), a process chamber(103), and a plurality of small plasma sources(105). The process chamber(103) is supplied with plasma through an injection hole from the remote plasma source(101). The plurality of small plasma sources(105) are placed in the upper portion of the process chamber(103). Each of the plurality of small plasma sources(105) is connected to the process chamber(103) through the injection hole. An induction coil surrounds the gas injection hole, and a high frequency power unit applies high frequency power to the induction coil.
申请公布号 KR20070099854(A) 申请公布日期 2007.10.10
申请号 KR20060031158 申请日期 2006.04.05
申请人 SEMES CO., LTD. 发明人 LEE, KI YUNG;KIM, HYUNG JOON
分类号 H01L21/3065 主分类号 H01L21/3065
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