发明名称 SPUTTERING SOURCE, SPUTTERING SYSTEM, METHOD FOR FORMING THIN FILM
摘要 A sputter film formed on the surface of an organic thin film without causing any damage thereon. Opening of the housing (101) of sputter sources (11-13) is closed with a shielding plate (103) and trap magnets (1051, 1052) are arranged on the opposite sides of the opening (107a). A target section (120) is arranged in the housing (101) and at the time of sputtering, the shielding plate (103) is connected with the earth potential, negatively charged particles such as electrons are entered into the shielding plate (103), and flying direction of the charged particles passed through the opening (107a) is curved by a magnetic field formed by the trap magnets (1051, 1052). Since the charged particles do not impinge on the surface of an object whereupon a film is to be formed when the object traverses above the sputter sources (11-13), damage on the organic thin film is suppressed.
申请公布号 KR20070099414(A) 申请公布日期 2007.10.09
申请号 KR20067027766 申请日期 2005.12.19
申请人 ULVAC, INC. 发明人 NEGISHI TOSHIO;ITO MASAHIRO
分类号 C23C14/34 主分类号 C23C14/34
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