发明名称 |
CMOS image sensor having photodiode and method for manufacturing the same |
摘要 |
A CMOS image sensor includes a photodiode in a semiconductor substrate; an insulating interlayer over the semiconductor substrate including the photodiode; a passivation layer pattern on the insulating interlayer corresponding to the photodiode; a first light-shielding layer pattern on the insulating interlayer between each passivation layer pattern; a second light-shielding layer pattern on the first light-shielding layer pattern; and at least one microlens on the passivation layer pattern.
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申请公布号 |
US7279763(B2) |
申请公布日期 |
2007.10.09 |
申请号 |
US20050320484 |
申请日期 |
2005.12.29 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
LEE SANG GI |
分类号 |
H01L31/0232 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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