发明名称 Nonvolatile semiconductor memory device that erases stored data after a predetermined time period without the use of a timer circuit
摘要 A nonvolatile semiconductor memory device is characterized by including a memory cell to store data, a first reference cell, a check circuit to check a threshold of the first reference cell, and an erase circuit to erase the data of the memory cell in response to detection by the check circuit that the threshold of the first reference cell is smaller than or substantially equal to a predetermined fixed value.
申请公布号 US7280404(B2) 申请公布日期 2007.10.09
申请号 US20050087735 申请日期 2005.03.24
申请人 FUJITSU LIMITED 发明人 SUZUKI ATSUHIRO
分类号 G11C11/34;G06F12/14;G11C16/04;G11C16/06;G11C16/16;G11C16/22;G11C16/34;H01L27/10;H01L29/78;H03K17/284 主分类号 G11C11/34
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