发明名称 |
Germanium on insulator fabrication via epitaxial germanium bonding |
摘要 |
A method of forming a germanium-on-insulator (GOI). An epitaxial germanium layer is formed on top of a first substrate. A first dielectric film is formed on top of the epitaxial germanium layer. A second substrate is provided. The first substrate is bonded to the second substrate by bonding the first dielectric film to the second substrate. The bonding resulted in a bonded wafer pair. The first substrate is removed after the bonding to expose epitaxial germanium layer to form the GOI substrate.
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申请公布号 |
US7279369(B2) |
申请公布日期 |
2007.10.09 |
申请号 |
US20030646681 |
申请日期 |
2003.08.21 |
申请人 |
INTEL CORPORATION |
发明人 |
LEI RYAN;SHAHEEN MOHAMAD A. |
分类号 |
H01L21/00;H01L21/762;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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