发明名称 |
N-channel MOSFETs comprising dual stressors, and methods for forming the same |
摘要 |
The present invention relates to a semiconductor device including at least one n-channel field effect transistor (n-FET). Specifically, the n-FET includes first and second patterned stressor layers that both contain a carbon-substituted and tensilely stressed single crystal semiconductor. The first patterned stressor layer has a first carbon concentration and is located in source and drain (S/D) extension regions of the n-FET at a first depth. The second patterned stressor layer has a second, higher carbon concentration and is located in S/D regions of the n-FET at a second, deeper depth. Such an n-FET with the first and second patterned stressor layers of different carbon concentration and different depths provide improved stress profile for enhancing electron mobility in the channel region of the n-FET.
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申请公布号 |
US7279758(B1) |
申请公布日期 |
2007.10.09 |
申请号 |
US20060420047 |
申请日期 |
2006.05.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LI JINGHONG H.;LIU YAOCHENG;LUO ZHIJIONG;MADAN ANITA;ROVEDO NIVO |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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