| 摘要 |
A method for fabricating a semiconductor device is provided to prevent dishing and deposition phenomena from occurring in an area where a trench width is coarse. A method for fabricating a semiconductor device includes the steps of: after forming a primary diffusion preventing film(102), an interlayer insulating film(104), a secondary diffusion preventing film(106), an amorphous carbon film, a nitride film and a reflection preventing film in an upper part of a semiconductor substrate(100) having a predetermined structure, etching predetermined areas of the reflection preventing film, the nitride film and the amorphous carbon film; forming a trench by etching the secondary diffusion preventing film(106), the interlayer insulating film(104), and a primary diffusion preventing film(102); forming a barrier metal film(116) in an upper part of an overall structure, forming a metal film(118) in the upper part of the overall structure by consecutively a chemical vapor deposition method and a plasma vapor deposition method; and chemically and mechanically flattening the secondary diffusion barrier(106) by using a secondary diffusion preventing layer as an etch stopping film.
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