| 摘要 |
A method for depositing a thin film in a semiconductor device is provided to improve characteristics of the thin film by supplying a reducing agent into a chamber which removes impurities from multiple layers. A primary reaction source and a secondary reaction source are fed into a process chamber to form multiple layers on the substrate. A reducing agent is introduced into the process chamber so as to remove impurities from the multiple layers and reduce the porosity. When the reducing agent is introduced, an excimer generated from a remote plasma is introduced into the chamber, while the substrate is heated by a temperature higher than a film growth temperature of the multiple layers.
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