Silicon on insulator wafer manufacturing method for manufacturing circuit, involves preparing base substrate formed of silicon wafer that is not subjected to donner killer anneal tempering type thermal treatment

摘要

The method involves preparing a silicon base substrate and implanting species through a surface of a donor silicon wafer, where the base substrate is formed of the silicon wafer that is not subjected to a donner killer anneal (DKA) tempering type thermal treatment. The silicon wafer is bonded on the base substrate at the level of the implanted surface. The silicon wafer is detached at the level of a zone weakened by the implantation of the species. An independent claim is also included for a substrate forming a base substrate for a silicon on insulator (SOI) wafer manufacture conforming to a method for manufacturing a silicon on insulator (SOI) wafer.