ETCHING COMPOSITION FOR ETCHING COPPER-BASED/MOLYBDENUM BASED MULTILAYER FILM OR INDIUM OXIDE FILM AND METHOD FOR ETCHING METAL LAYER USING THE SAME

摘要

An etching solution which controls the etching rate easily while etching gate electrodes, data electrodes and pixel electrodes comprising copper at the same time, exhibits a tapered angle of about 30 to 60 degrees due to good tapered profile, is good at straightness of patterns, is low in the CD loss, and does not cause etching properties to be changed or residues to be remained although a large number of substrates are etched, and an etching method using the same are provided. An etching composition for etching a copper-based/molybdenum-based multilayer film or an indium oxide film comprises: (a) 5 to 30 wt.% of hydrogen peroxide; (b) 1 to 5 wt.% of oxalic acid; (c) 0.5 to 5 wt.% of an organic acid other than the oxalic acid; (d) 0.2to 5 wt.% of phosphate; (e) 0.2 to 5 wt.% of a water-soluble cyclic amine compound; (f) 0.2 to 5 wt.% of a water-soluble compound simultaneously having an amino group and a carboxylic acid group in one compound; (g) 0.01 to 1.0 wt.% of a fluoro compound; and (h) a balance of deionized water based on the total composition weight.