| 摘要 |
A method for manufacturing a semiconductor device using a low permittivity insulation film is provided to increase the operation speed of the device by reducing the bar resistance of a metal wiring. A method for manufacturing a semiconductor device using a low permittivity insulation film includes the steps of: forming a metal wiring(100) on a lower structure(21); forming a conductive capping layer on both side walls of the metal wiring(100); and forming the low permittivity insulation film on the upper part of the metal wiring(100) including the conductive capping layer. The step of forming the conductive capping layer includes the steps of: depositing a capping layer material on a front surface including the metal wiring(100); and forming the conductive capping layer in the shape of a spacer only on both side walls of the metal wiring(100) by etching the capping layer material between the metal wiring(100) and the upper part of the metal wiring(100).
|
